IRF7105TRPBF
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 3.5 A, 3.5 A, 0.083 ohm
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.050 | $1.05 |
| Total Price | $1.05 | ||
| Quantity | Price |
|---|---|
| 1+ | $1.050 |
| 50+ | $0.536 |
| 100+ | $0.486 |
| 250+ | $0.442 |
| 500+ | $0.398 |
| 1000+ | $0.390 |
| 2500+ | $0.382 |
| 5000+ | $0.374 |
| Quantity | Price |
|---|---|
| 4000+ | $0.331 |
| 12000+ | $0.324 |
| 20000+ | $0.318 |
Product Information
Product Overview
The IRF7105TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Technical Specifications
Complementary N and P Channel
25V
25V
3.5A
0.083ohm
8Pins
2W
-
MSL 1 - Unlimited
3.5A
25V
3.5A
0.083ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
6 Products Found
Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate