IRF7105TRPBF
MOSFET Dual, Canal complementario N y P, 25 V, 25 V, 3.5 A, 3.5 A, 0.083 ohm
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| Tipo de embalaje | Cantidad | Precio unitario: | Total |
|---|---|---|---|
| Cinta adhesiva | 1 | $1.070 | $1.07 |
| Total Precio | $1.07 | ||
| Cantidad | Precio |
|---|---|
| 1+ | $1.070 |
| 50+ | $0.545 |
| 100+ | $0.494 |
| 250+ | $0.449 |
| 500+ | $0.404 |
| 1000+ | $0.396 |
| 2500+ | $0.388 |
| 5000+ | $0.380 |
| Cantidad | Precio |
|---|---|
| 4000+ | $0.323 |
| 8000+ | $0.317 |
| 12000+ | $0.310 |
| 20000+ | $0.304 |
| 40000+ | $0.297 |
| 100000+ | $0.291 |
Información del producto
Resumen del producto
The IRF7105TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Especificaciones técnicas
Complementary N and P Channel
25V
25V
3.5A
0.083ohm
8Pines
2W
-
MSL 1 - Unlimited
0
0
3.5A
0.083ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
Documentos técnicos (2)
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RoHS
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