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IRF5803TRPBF
Power MOSFET, P Channel, 40 V, 3.4 A, 0.112 ohm, TSOP, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRF5803TRPBF
Newark Part No.
Re-Reel25M9809
Cut Tape25M9809
Your Part Number
Technical Datasheet
773 In Stock
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Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.70 |
| 10+ | $0.42 |
| 25+ | $0.39 |
| 50+ | $0.35 |
| 100+ | $0.32 |
| 250+ | $0.31 |
| 500+ | $0.30 |
| 1000+ | $0.26 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF5803TRPBF
Newark Part No.
Re-Reel25M9809
Cut Tape25M9809
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id3.4A
On Resistance Rds(on)0.112ohm
Drain Source On State Resistance0.112ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2W
Power Dissipation Pd2W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
Single P-channel HEXFET® power MOSFET potential applications suitable for DC switches and load switch application.
- Low RDS(on)
- Industry-leading quality
- Low gate charge
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.112ohm
Transistor Case Style
TSOP
Rds(on) Test Voltage
10V
Power Dissipation
2W
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
3.4A
Drain Source On State Resistance
0.112ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate