Print Page
IRF520NPBF
Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF520NPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 19K8210 |
| Also Known As | SP001571310 |
| Your Part Number | |
| Technical Datasheet |
26,410 In Stock
93 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.520 |
| 10+ | $0.977 |
| 100+ | $0.670 |
| 500+ | $0.539 |
| 1000+ | $0.528 |
| 2500+ | $0.517 |
| 10000+ | $0.507 |
Price for:Each
Minimum: 1
Multiple: 1
$1.52
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF520NPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 19K8210 |
| Also Known As | SP001571310 |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 100V |
| Continuous Drain Current Id | 9.7A |
| Drain Source On State Resistance | 0.2ohm |
| On Resistance Rds(on) | 0.2ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Power Dissipation Pd | 48W |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 47W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Dynamic dv/dt rating
- Fully avalanche rated
- Advanced process technology
Applications
Power Management
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 100V |
| Drain Source On State Resistance | 0.2ohm |
| Transistor Case Style | TO-220AB |
| Power Dissipation Pd | 48W |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 9.7A |
| On Resistance Rds(on) | 0.2ohm |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 47W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
Alternatives for IRF520NPBF
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |