Print Page
IRF100B201
MOSFET, N-CH, 100V, 192A, TO-220AB
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF100B201Copy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 12AC9745 |
| Product Range | StrongIRFET, HEXFET |
| Your Part Number | |
| Technical Datasheet |
5,425 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $4.830 |
| 10+ | $3.350 |
| 25+ | $3.040 |
| 50+ | $2.720 |
| 100+ | $2.510 |
| 250+ | $2.330 |
| 500+ | $2.150 |
Price for:Each
Minimum: 1
Multiple: 1
$4.83
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF100B201Copy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 12AC9745 |
| Product Range | StrongIRFET, HEXFET |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 100V |
| Continuous Drain Current Id | 192A |
| Drain Source On State Resistance | 4200µohm |
| On Resistance Rds(on) | 0.0035ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation Pd | 441W |
| Power Dissipation | 441W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | StrongIRFET, HEXFET |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
HEXFET® power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/AC inverters , DC/DC and AC/DC converters.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 100V |
| Drain Source On State Resistance | 4200µohm |
| Transistor Case Style | TO-220AB |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 441W |
| No. of Pins | 3Pins |
| Product Range | StrongIRFET, HEXFET |
| MSL | - |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 192A |
| On Resistance Rds(on) | 0.0035ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 441W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
Technical Docs (2)
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |