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IPD068P03L3GATMA1
Power MOSFET, P Channel, 30 V, 70 A, 0.0068 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD068P03L3GATMA1Copy
Manufacturer Standard Lead Time18 weeks
Newark Part No.
Full Reel86AK5196
Re-Reel50Y2023RL
Cut Tape50Y2023
Also Known AsIPD068P03L3 G, SP001127838
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $1.610 | $8.05 |
| Total Price | $8.05 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $1.610 |
| 50+ | $1.020 |
| 100+ | $0.677 |
| 250+ | $0.604 |
| 500+ | $0.531 |
| 1000+ | $0.485 |
| 2500+ | $0.433 |
| 5000+ | $0.408 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.558 |
| 7500+ | $0.503 |
| 12500+ | $0.482 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD068P03L3GATMA1Copy
Manufacturer Standard Lead Time18 weeks
Newark Part No.
Full Reel86AK5196
Re-Reel50Y2023RL
Cut Tape50Y2023
Also Known AsIPD068P03L3 G, SP001127838
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id70A
On Resistance Rds(on)0.005ohm
Drain Source On State Resistance6800µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd100W
Gate Source Threshold Voltage Max1.5V
Power Dissipation100W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPD068P03L3 G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
- Enhancement-mode
- 100% Avalanche rated
- Small signal packages approved to AEC-Q101
- Qualified to JEDEC for target applications
- Halogen-free, Green device
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.005ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
70A
Drain Source On State Resistance
6800µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
100W
Power Dissipation
100W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate