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BSP613PH6327XTSA1
MOSFET, P-CH, 60V, 2.9A, SOT-223
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14,275 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.930 |
| 10+ | $1.230 |
| 100+ | $0.821 |
| 500+ | $0.649 |
| 1000+ | $0.592 |
| 3000+ | $0.539 |
| 10000+ | $0.529 |
Price for:Each
Minimum: 1
Multiple: 1
$1.93
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSP613PH6327XTSA1
Newark Part No.29X1531
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.9A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.13ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Power Dissipation Pd1.8W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.8W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
- Enhancement mode
- Avalanche rated
- dv/dt Rated
- AEC-Q101 qualified
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.11ohm
Transistor Case Style
SOT-223
Power Dissipation Pd
1.8W
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
2.9A
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability