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BSC010N04LSATMA1
Power MOSFET, N Channel, 40 V, 100 A, 0.001 ohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BSC010N04LSATMA1Copy |
| Manufacturer Standard Lead Time | 52 weeks |
| Newark Part No. | Re-Reel50Y1792RL Cut Tape50Y1792 |
| Also Known As | BSC010N04LS, SP000928282 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.310 | $2.31 |
| Total Price | $2.31 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.310 |
| 50+ | $1.280 |
| 100+ | $1.190 |
| 250+ | $1.100 |
| 500+ | $1.010 |
| 1000+ | $0.990 |
| 2500+ | $0.970 |
| 5000+ | $0.949 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BSC010N04LSATMA1Copy |
| Manufacturer Standard Lead Time | 52 weeks |
| Newark Part No. | Re-Reel50Y1792RL Cut Tape50Y1792 |
| Also Known As | BSC010N04LS, SP000928282 |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 40V |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 0.001ohm |
| On Resistance Rds(on) | 850µohm |
| Transistor Case Style | TDSON |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 139W |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2V |
| Power Dissipation | 139W |
| No. of Pins | 8Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The BSC010N04LS is a 40V N-channel Power MOSFET optimized for synchronous rectification. This MOSFET features not only the industry's lowest RDS (on) but also a perfect switching behaviour for fast switching applications. 15% lower RDS (on) and 31% lower Figure of Merit (RDS (on) x Qg) compared to alternative devices has been realized by advanced thin wafer technology. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Saving space
- Very low voltage overshoot
- Superior thermal resistance
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 40V |
| Drain Source On State Resistance | 0.001ohm |
| Transistor Case Style | TDSON |
| Power Dissipation Pd | 139W |
| Gate Source Threshold Voltage Max | 2V |
| No. of Pins | 8Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 100A |
| On Resistance Rds(on) | 850µohm |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 139W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (3)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
 | Proposition 65 |