BAT1504RE6152HTSA1

RF Schottky Diode, Dual Series, 4 V, 110 mA, 300 mV, 0.25 pF, SOT-23

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INFINEON BAT1504RE6152HTSA1
ManufacturerINFINEON
Manufacturer Part NoBAT1504RE6152HTSA1
Newark Part No.68AC4376
Technical Datasheet
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Packaging Options
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Product Information

ManufacturerINFINEON
Manufacturer Part NoBAT1504RE6152HTSA1
Newark Part No.68AC4376
Technical Datasheet
Diode ConfigurationDual Series
Reverse Voltage4V
Forward Current110mA
Forward Voltage300mV
Forward Voltage VF Max300mV
Diode Capacitance0.25pF
Diode Case StyleSOT-23
No. of Pins3 Pin
Diode MountingSurface Mount
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (21-Jan-2025)

Product Overview

Silicon RF Schottky diode suitable for use with mixers and detectors in satellite systems, low noise blocks for Ku bands and security systems.

  • Silicon low barrier N-type device with integrated guard ring on-chip for over-voltage protection
  • Low inductance and low capacitance
  • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
  • Reverse series pair pin configuration

Technical Specifications

Diode Configuration

Dual Series

Forward Current

110mA

Forward Voltage VF Max

300mV

Diode Case Style

SOT-23

Diode Mounting

Surface Mount

Product Range

-

Reverse Voltage

4V

Forward Voltage

300mV

Diode Capacitance

0.25pF

No. of Pins

3 Pin

Operating Temperature Max

150°C

SVHC

No SVHC (21-Jan-2025)

Technical Docs (1)

Legislation and Environmental

US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes

RoHS

SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate

Product Compliance Certificate