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AUIRF7343QTR
Dual MOSFET, Complementary N and P Channel, 55 V, 4.7 A, 0.043 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoAUIRF7343QTRCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.
Re-Reel43AC2192RL
Cut Tape43AC2192
Product RangeHEXFET Series
Your Part Number
13,765 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.500 | $2.50 |
| Total Price | $2.50 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.500 |
| 10+ | $2.090 |
| 25+ | $1.990 |
| 50+ | $1.870 |
| 100+ | $1.770 |
| 250+ | $1.710 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7343QTRCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.
Re-Reel43AC2192RL
Cut Tape43AC2192
Product RangeHEXFET Series
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds55V
Continuous Drain Current Id4.7A
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id N Channel4.7A
Continuous Drain Current Id P Channel4.7A
Drain Source On State Resistance N Channel0.043ohm
Drain Source On State Resistance P Channel0.043ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
QualificationAEC-Q101
SVHCNo SVHC (27-Jun-2018)
Product Overview
- Automotive HEXFET® power MOSFET
- Automotive qualified
- Advanced planar technology
- Ultra-low on-resistance
- Logic level gate drive
- Dual N and P channel MOSFET
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
55V
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id P Channel
4.7A
Drain Source On State Resistance P Channel
0.043ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id
4.7A
Continuous Drain Current Id N Channel
4.7A
Drain Source On State Resistance N Channel
0.043ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate