AUIRF7341QTR

AUIRF7341QTR is an automotive Q101 55V dual N-channel HEXFET power MOSFET in a SO-8 package. Additional features of this automotive-qualified HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal for a variety of power applications. Potential applications include port injection and solenoid injection.

• Advanced planar technology, ultra low on-resistance
• Logic level gate drive, surface mount
• Drain-to-source breakdown voltage is 55V min at VGS = 0V, ID = 250µA, TJ = 25°C
• Static drain-to-source on-resistance is 0.043ohm typ at VGS = 10V, ID = 5.1A, TJ = 25°C
• Gate-to-source forward leakage is 100nA max at VGS = 20V
• Gate threshold voltage is 3V maximum at VDS = VGS, ID = 250µA
• Rise time is 7.7ns typ at VDD = 28V, ID = 1.0A, RG = 6.0 ohm, VGS = 10V, TJ = 25°C
• Fall time is 12.5ns typ at VDD = 28V, ID = 1.0A, RG = 6.0 ohm, VGS = 10V, TJ = 25°C
• Diode forward voltage is 1.2V max at TJ = 25°C, IS = 2.6A, VGS = 0V
• Operating junction and storage temperature range from -55 to + 175°C