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SI2336DS-T1-GE3
Power MOSFET, N Channel, 30 V, 5.2 A, 42 mohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2336DS-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel65T1688
Full Reel86AK6269
Re-Reel23T8500RL
Cut Tape23T8500
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.784 | $0.78 |
| Total Price | $0.78 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.784 |
| 50+ | $0.496 |
| 100+ | $0.331 |
| 250+ | $0.291 |
| 500+ | $0.251 |
| 1000+ | $0.220 |
| 2500+ | $0.199 |
| 5000+ | $0.177 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.188 |
| 5000+ | $0.341 |
| 9000+ | $0.165 |
| 10000+ | $0.321 |
| 15000+ | $0.162 |
| 20000+ | $0.304 |
| 30000+ | $0.288 |
| 50000+ | $0.279 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2336DS-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel65T1688
Full Reel86AK6269
Re-Reel23T8500RL
Cut Tape23T8500
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.2A
On Resistance Rds(on)0.034ohm
Drain Source On State Resistance0.042ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.8W
Power Dissipation Pd1.8W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Product Overview
- N-channel 30V (D-S) TrenchFET® power MOSFET
- 100% Rg tested
- Used in DC/DC converters, boost converters
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.034ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.8W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
Drain Source On State Resistance
0.042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
1.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate