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SI2302DDS-T1-GE3
Power MOSFET, N Channel, 20 V, 2.6 A, 0.057 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2302DDS-T1-GE3Copy
Newark Part No.
Re-Reel70AC6493
Cut Tape70AC6493
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.381 | $0.38 |
| Total Price | $0.38 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.381 |
| 25+ | $0.327 |
| 50+ | $0.264 |
| 100+ | $0.200 |
| 250+ | $0.195 |
| 500+ | $0.190 |
| 1000+ | $0.148 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302DDS-T1-GE3Copy
Newark Part No.
Re-Reel70AC6493
Cut Tape70AC6493
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.6A
On Resistance Rds(on)0.045ohm
Drain Source On State Resistance0.057ohm
Transistor MountingSurface Mount
Power Dissipation Pd710mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max850mV
Transistor Case StyleSOT-23
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (19-Jan-2021)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.045ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
2.6A
Drain Source On State Resistance
0.057ohm
Power Dissipation Pd
710mW
Gate Source Threshold Voltage Max
850mV
Power Dissipation
710mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
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