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ZVP2106A
P CHANNEL DMOS FET, -60V, 280mA, TO-92
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18,226 In Stock
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| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $1.530 | $0.306 |
| 10+ | $1.020 | $0.306 |
| 100+ | $0.732 | $0.306 |
| 500+ | $0.606 | $0.306 |
| 1000+ | $0.565 | $0.306 |
| 2500+ | $0.524 | $0.306 |
| 12000+ | $0.495 | $0.306 |
Price for:Each
Minimum: 1
Multiple: 1
$0.31
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZVP2106A
Newark Part No.85K9995
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id280mA
Drain Source On State Resistance5ohm
On Resistance Rds(on)4ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Power Dissipation Pd700mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation700mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The ZVP2106A is a P-channel enhancement mode MOSFET Transistor with -4A pulsed drain current.
- ±20V Gate Source Voltage
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Case Style
TO-226AA
Power Dissipation Pd
700mW
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
280mA
On Resistance Rds(on)
4ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
