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DMN63D8LDW-7
Dual MOSFET, N Channel, 30 V, 30 V, 260 mA, 260 mA, 2.8 ohm
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ManufacturerDIODES INC.
Manufacturer Part NoDMN63D8LDW-7
Newark Part No.
Full Reel86AK4791
Re-Reel82Y6580
Cut Tape82Y6580
Your Part Number
39,774 In Stock
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.273 | $1.37 |
| Total Price | $1.37 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.273 |
| 10+ | $0.170 |
| 25+ | $0.150 |
| 50+ | $0.130 |
| 100+ | $0.110 |
| 250+ | $0.097 |
| 500+ | $0.084 |
| 1000+ | $0.076 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.086 |
| 6000+ | $0.082 |
| 12000+ | $0.078 |
| 18000+ | $0.075 |
| 30000+ | $0.070 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN63D8LDW-7
Newark Part No.
Full Reel86AK4791
Re-Reel82Y6580
Cut Tape82Y6580
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id260mA
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel260mA
Continuous Drain Current Id P Channel260mA
Drain Source On State Resistance N Channel2.8ohm
Drain Source On State Resistance P Channel2.8ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel400mW
Power Dissipation P Channel400mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMN63D8LDW-7 is a dual N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include DC-DC converters, power management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low on-resistance, low input capacitance, ESD protected gate
- Fast switching speed, small surface mount package
- Drain-source voltage is 30V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 220mA at TA = +25°C, VGS = 10V, steady state
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 800mA at TA = +25°C
- Total power dissipation is 300mW at TA = +25°C
- Static drain-source on-resistance is 2.8ohm max at VGS = 10.0V, ID = 250mA, TA = +25°C
- SOT363 (standard) case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
260mA
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
260mA
Drain Source On State Resistance P Channel
2.8ohm
No. of Pins
6Pins
Power Dissipation P Channel
400mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
260mA
Drain Source On State Resistance N Channel
2.8ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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