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DMN62D0LFD-7
MOSFET, N-CH, 60V, 0.31A, X1-DFN1212 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN62D0LFD-7
Newark Part No.28AK8634
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.126 |
| 10+ | $0.092 |
| 25+ | $0.082 |
| 50+ | $0.077 |
| 100+ | $0.071 |
| 250+ | $0.066 |
| 500+ | $0.063 |
| 1000+ | $0.061 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN62D0LFD-7
Newark Part No.28AK8634
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id310mA
On Resistance Rds(on)1.3ohm
Drain Source On State Resistance1.3ohm
Transistor Case StyleX1-DFN1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4V
Gate Source Threshold Voltage Max1V
Power Dissipation480mW
Power Dissipation Pd480mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.3ohm
Transistor Case Style
X1-DFN1212
Rds(on) Test Voltage
4V
Power Dissipation
480mW
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
310mA
Drain Source On State Resistance
1.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
480mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability