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DMN13H750S-7
MOSFET, N-CH, 130V, 1A, SOT-23
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN13H750S-7Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8479
Your Part Number
565 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 5+ | $0.865 |
| 10+ | $0.538 |
| 25+ | $0.475 |
| 50+ | $0.412 |
| 100+ | $0.349 |
| 250+ | $0.308 |
| 500+ | $0.267 |
| 1000+ | $0.240 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$4.32
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN13H750S-7Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.28AK8479
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds130V
Continuous Drain Current Id1A
Drain Source On State Resistance0.41ohm
On Resistance Rds(on)0.41ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation770mW
Power Dissipation Pd770mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
130V
Drain Source On State Resistance
0.41ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
770mW
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
1A
On Resistance Rds(on)
0.41ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
Power Dissipation Pd
770mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate