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DMN10H120SE-13
Power MOSFET, N Channel, 100 V, 3.6 A, 0.077 ohm, SOT-223, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMN10H120SE-13
Newark Part No.
Re-Reel39AH6593
Cut Tape39AH6593
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 37 week(s)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H120SE-13
Newark Part No.
Re-Reel39AH6593
Cut Tape39AH6593
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id3.6A
On Resistance Rds(on)0.077ohm
Drain Source On State Resistance0.077ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.3W
Gate Source Threshold Voltage Max2.6V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.077ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.6V
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
3.6A
Drain Source On State Resistance
0.077ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.3W
Power Dissipation
1.3W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate