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DMG6601LVT-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.8 A, 3.8 A, 0.055 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMG6601LVT-7Copy
Manufacturer Standard Lead Time41 weeks
Newark Part No.
Full Reel86AK4747
Re-Reel82Y6568RL
Cut Tape82Y6568
Your Part Number
97 In Stock
23,644 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.448 | $0.45 |
| Total Price | $0.45 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.448 |
| 10+ | $0.274 |
| 25+ | $0.246 |
| 50+ | $0.218 |
| 100+ | $0.190 |
| 250+ | $0.169 |
| 500+ | $0.148 |
| 1000+ | $0.135 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.110 |
| 6000+ | $0.104 |
| 12000+ | $0.099 |
| 18000+ | $0.093 |
| 30000+ | $0.085 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6601LVT-7Copy
Manufacturer Standard Lead Time41 weeks
Newark Part No.
Full Reel86AK4747
Re-Reel82Y6568RL
Cut Tape82Y6568
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id3.8A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.8A
Continuous Drain Current Id P Channel3.8A
Drain Source On State Resistance N Channel0.034ohm
Drain Source On State Resistance P Channel0.034ohm
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel850mW
Power Dissipation P Channel850mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Complementary MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
3.8A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.8A
Drain Source On State Resistance P Channel
0.034ohm
No. of Pins
6Pins
Power Dissipation P Channel
850mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
3.8A
Drain Source On State Resistance N Channel
0.034ohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
850mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate