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DMG2305UX-13
Power MOSFET, P Channel, 20 V, 4.2 A, 0.052 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMG2305UX-13Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel86AK4739
Re-Reel82Y6563RL
Cut Tape82Y6563
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.492 | $0.49 |
| Total Price | $0.49 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.492 |
| 50+ | $0.226 |
| 100+ | $0.198 |
| 250+ | $0.194 |
| 500+ | $0.190 |
| 1000+ | $0.186 |
| 2500+ | $0.182 |
| 5000+ | $0.178 |
Full Reel
| Quantity | Price |
|---|---|
| 10000+ | $0.083 |
| 20000+ | $0.079 |
| 30000+ | $0.074 |
| 50000+ | $0.073 |
| 100000+ | $0.071 |
| 250000+ | $0.070 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG2305UX-13Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel86AK4739
Re-Reel82Y6563RL
Cut Tape82Y6563
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.2A
On Resistance Rds(on)0.04ohm
Drain Source On State Resistance0.052ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd1.4W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation1.4W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (04-Feb-2026)
Product Overview
DMG2305UX-13 is a P-channel enhancement mode MOSFET in a 3 pin SOT23 package. This MOSFET is designed to minimize on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include backlighting, power management functions, DC-DC converters and motor controls.
- Dain-source voltage is -20V
- Static drain-source on-resistance is 100mohm(VGS = -2.5V, ID = -3.4A)
- Gate-source voltage is ±8V
- Pulsed drain current is -15A
- Power dissipation is 1.4W
- Operating temperature range from -55 to +150°C
- Low on-resistance
- Low input capacitance
- Fast switching speed
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.04ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
1.4W
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (04-Feb-2026)
Transistor Polarity
P Channel
Continuous Drain Current Id
4.2A
Drain Source On State Resistance
0.052ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
1.4W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
