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DMG1012UW
Power MOSFET, Enhancement Mode, N Channel, 20 V, 1 A, 0.45 ohm, SOT-323, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMG1012UWCopy
Newark Part No.
Full Reel86AK4730
Re-Reel65T8207
Cut Tape65T8207
Your Part Number
176,248 In Stock
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Delivery in 2-4 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.281 | $1.41 |
| Total Price | $1.41 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.281 |
| 10+ | $0.218 |
| 25+ | $0.153 |
| 50+ | $0.129 |
| 100+ | $0.110 |
| 250+ | $0.090 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.060 |
| 6000+ | $0.048 |
| 12000+ | $0.042 |
| 18000+ | $0.039 |
| 30000+ | $0.034 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG1012UWCopy
Newark Part No.
Full Reel86AK4730
Re-Reel65T8207
Cut Tape65T8207
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
On Resistance Rds(on)0.3ohm
Drain Source On State Resistance0.45ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd290mW
Gate Source Threshold Voltage Max500mV
Power Dissipation290mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The DMG1012UW is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- ESD protected up to 2KV
- Halogen-free, Green device
- Qualified to AEC-Q101 standards for high reliability
- Moisture sensitivity level 1 as per J-STD-020
- UL94V-0 Flammability rating
Applications
Power Management, Automotive, Defence, Military & Aerospace
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1A
Drain Source On State Resistance
0.45ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
290mW
Power Dissipation
290mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.3ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
500mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability