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MXP120A250SE-T1GE3
SIC MOSFET, N-CH, 1.2KV, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoMXP120A250SE-T1GE3Copy
Manufacturer Standard Lead Time16 weeks
Newark Part No.16AN4144
Product RangeMaxSiC Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 1+ | $6.500 |
| 10+ | $5.900 |
| 25+ | $5.550 |
| 50+ | $5.200 |
| 100+ | $4.750 |
| 500+ | $4.410 |
| 1000+ | $3.960 |
| 2500+ | $3.740 |
Price for:Each
Minimum: 1
Multiple: 1
$6.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoMXP120A250SE-T1GE3Copy
Manufacturer Standard Lead Time16 weeks
Newark Part No.16AN4144
Product RangeMaxSiC Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id12A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.313ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3V
Power Dissipation85W
Operating Temperature Max175°C
Product RangeMaxSiC Series
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.313ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
3V
Operating Temperature Max
175°C
SVHC
No SVHC (04-Feb-2026)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
85W
Product Range
MaxSiC Series
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate