New DealsOffersContact UsHelpTrack Ordersen español
Register
0
0 Items$0.00

277W Single IGBTs:

2 Products Found
Find a huge range of 277W Single IGBTs at Newark Electronics. We stock a wide range of Single IGBTs, such as 250W, 375W, 395W & 125W Single IGBTs from the worlds top manufacturers including: Rohm
View
Buyer
Engineer
Manufacturer
DC Collector Current
Continuous Collector Current
Collector Emitter Saturation Voltage Vce(on)
Collector Emitter Saturation Voltage
Power Dissipation Pd
Power Dissipation
Collector Emitter Voltage Max
Collector Emitter Voltage V(br)ceo
Transistor Case Style
No. of Pins
Operating Temperature Max
Transistor Mounting
Product Range
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice forQuantity
RGTH00TS65GC11
ROHM RGTH00TS65GC11
76Y4972

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. IGBT
  2. 85 A
  3. 1.6 V
  4. 277 W
  5. 650 V
  6. TO-247N
  7. 3 Pins
Each
Pricing is unavailable. Please contact customer services.
85A
85A
1.6V
1.6V
277W
277W
650V
650V
TO-247N
3Pins
175°C
Through Hole
-
RGTH00TS65DGC13
ROHM RGTH00TS65DGC13
37AJ0740

Data Sheet

RoHS

ROHM
  1. IGBT
  2. 85 A
  3. 1.6 V
  4. 277 W
  5. 650 V
  6. TO-247N
  7. 3 Pins
Each
Pricing is unavailable. Please contact customer services.
85A
85A
1.6V
1.6V
277W
277W
650V
650V
TO-247N
3Pins
175°C
Through Hole
Field Stop Trench Series
1-2 of 2 items
of 1 page(s)

Popular Suppliers

NEXPERIA
ONSEMI
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
MAT14ARZ Bipolar Transistor Array
ANALOG DEVICES
MAT14ARZ Bipolar Transistor Array
ANALOG DEVICES
TK095N65Z5 650V N-channel power MOSFETs
TOSHIBA
TK095N65Z5 650V N-channel power MOSFETs
TOSHIBA
600V Gallium Nitride Transistor
INFINEON
600V Gallium Nitride (GaN) Transistor
INFINEON
600 V, 30 A Trench field-stop IGBT
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
XPT series IGBT Thin-wafer Technolog
LITTELFUSE
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.
LITTELFUSE
MPS Series SiC Schottky Diodes
GENESIC SEMICONDUCTOR
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
N-Channel Power MOSFET
INFINEON
N-Channel Power MOSFET
INFINEON
650 V, Gallium Nitride (GaN) FET
NEXPERIA
650 V, Gallium Nitride (GaN) FET
NEXPERIA
H-Bridge in APM16 Series
ONSEMI
H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter
ONSEMI
Silicon-carbide (SiC) N-Channel Power MOSFET
MICROCHIP
Silicon-carbide (SiC) N-Channel Power MOSFET
MICROCHIP
SIC Mosfet Module, 900V, 149A
ONSEMI
SIC Mosfet Module, 900V, 149A
ONSEMI
onsemi EliteSiC
ONSEMI
onsemi EliteSiC - 650V to 1700V - Now in stock
ONSEMI
High Speed Trr Series
ROHM
Low Noise PrestoMOS™ - High Speed Trr Series
ROHM
IGBT 650V Field Stop Trench Technology
ONSEMI
IGBT 650V Field Stop Trench Technology
ONSEMI
Norton Secured
BSI 9001
AMEX
Mastercard
Visa
Trade Account