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HGTG11N120CND
IGBT Single Transistor, 43 A, 2.4 V, 298 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $7.560 |
| 10+ | $6.640 |
| 25+ | $5.720 |
| 50+ | $4.800 |
| 100+ | $4.500 |
| 250+ | $4.200 |
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Minimum: 1
Multiple: 1
$7.56
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Product Information
ManufacturerONSEMI
Manufacturer Part NoHGTG11N120CND
Newark Part No.47T5082
Technical Datasheet
Continuous Collector Current43A
DC Collector Current43A
Collector Emitter Saturation Voltage Vce(on)2.4V
Collector Emitter Saturation Voltage2.4V
Power Dissipation298W
Power Dissipation Pd298W
Collector Emitter Voltage V(br)ceo1.2kV
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCLead (25-Jun-2025)
Technical Specifications
Continuous Collector Current
43A
Collector Emitter Saturation Voltage Vce(on)
2.4V
Power Dissipation
298W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (25-Jun-2025)
DC Collector Current
43A
Collector Emitter Saturation Voltage
2.4V
Power Dissipation Pd
298W
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Surface Mount
MSL
-
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability