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SISS66DN-T1-GE3
Power MOSFET, N Channel, 30 V, 178.3 A, 0.00138 ohm, PowerPAK 1212, Surface Mount
14,561 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.550 | $2.55 |
| Total Price | $2.55 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.550 |
| 50+ | $1.730 |
| 100+ | $1.260 |
| 250+ | $1.160 |
| 500+ | $1.050 |
| 1000+ | $0.982 |
| 2500+ | $0.968 |
| 5000+ | $0.953 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS66DN-T1-GE3Copy
Manufacturer Standard Lead Time25 weeks
Newark Part No.
Re-Reel10AH0980RL
Cut Tape10AH0980
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id178.3A
On Resistance Rds(on)0.00115ohm
Drain Source On State Resistance0.00138ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd65.8W
Gate Source Threshold Voltage Max2.5V
Power Dissipation65.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.00115ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
178.3A
Drain Source On State Resistance
0.00138ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
65.8W
Power Dissipation
65.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate