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FDC6506P
Dual MOSFET, P Channel, 30 V, 3 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC6506P
Newark Part No.
Re-Reel58K8826
Cut Tape58K8826
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6506P
Newark Part No.
Re-Reel58K8826
Cut Tape58K8826
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id3A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel3A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.17ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2018)
Product Overview
The FDC6506P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3A
Drain Source On State Resistance P Channel
0.17ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SuperSOT
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2018)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate