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SI5441BDC-T1-GE3
Power MOSFET, P Channel, 20 V, 6.1 A, 0.08 ohm, 1206, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI5441BDC-T1-GE3
Newark Part No.16P3774
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5441BDC-T1-GE3
Newark Part No.16P3774
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6.1A
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.08ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage8V
Gate Source Threshold Voltage Max12V
Transistor Case Style1206
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.08ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
8V
Transistor Case Style
1206
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
6.1A
On Resistance Rds(on)
0.08ohm
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
12V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate