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SI4134DY-T1-GE3
Power MOSFET, N Channel, 30 V, 14 A, 0.014 ohm, SOIC, Surface Mount
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $1.170 |
| 10+ | $0.749 |
| 25+ | $0.663 |
| 50+ | $0.578 |
| 100+ | $0.492 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4134DY-T1-GE3
Newark Part No.55R1920
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id14A
Drain Source On State Resistance0.014ohm
On Resistance Rds(on)0.0115ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd5W
Gate Source Threshold Voltage Max1.8V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
The SI4134DY-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
14A
On Resistance Rds(on)
0.0115ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5W
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.014ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability