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SIHG47N60EF-GE3
Power MOSFET, N Channel, 600 V, 47 A, 0.065 ohm, TO-247AC, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 500+ | $8.200 |
Price for:Each
Minimum: 500
Multiple: 500
$4,100.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHG47N60EF-GE3
Newark Part No.99W9489
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id47A
On Resistance Rds(on)0.056ohm
Drain Source On State Resistance0.065ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd379W
Transistor Case StyleTO-247AC
Gate Source Threshold Voltage Max4V
Power Dissipation379W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.056ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
379W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
47A
Drain Source On State Resistance
0.065ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-247AC
Power Dissipation
379W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate