Print Page
SIA414DJ-T1-GE3
Power MOSFET, N Channel, 8 V, 12 A, 11 mohm, SC-70, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIA414DJ-T1-GE3
Newark Part No.16P3612
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA414DJ-T1-GE3
Newark Part No.16P3612
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id12A
Drain Source On State Resistance11mohm
On Resistance Rds(on)0.009ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.5W
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max800mV
Transistor Case StyleSC-70
Power Dissipation3.5W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Alternatives for SIA414DJ-T1-GE3
1 Product Found
Product Overview
The SIA414DJ-T1-GE3 is a 8VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch applications.
- New thermally enhanced PowerPAK® package
- Small footprint area
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
8V
Drain Source On State Resistance
11mohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Transistor Case Style
SC-70
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.009ohm
Power Dissipation Pd
3.5W
Gate Source Threshold Voltage Max
800mV
Power Dissipation
3.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate