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SIA414DJ-T1-GE3
Power MOSFET, N Channel, 8 V, 12 A, 11 mohm, SC-70, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 15 week(s)
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA414DJ-T1-GE3
Newark Part No.85W0169
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id12A
On Resistance Rds(on)0.009ohm
Drain Source On State Resistance11mohm
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Power Dissipation Pd3.5W
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max800mV
Power Dissipation3.5W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
8V
On Resistance Rds(on)
0.009ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.5W
Gate Source Threshold Voltage Max
800mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
11mohm
Rds(on) Test Voltage
5V
Transistor Case Style
SC-70
Power Dissipation
3.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate