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SI7852ADP-T1-GE3
Power MOSFET, N Channel, 80 V, 30 A, 0.017 ohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7852ADP-T1-GE3
Newark Part No.16P3875
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7852ADP-T1-GE3
Newark Part No.16P3875
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id30A
On Resistance Rds(on)0.021ohm
Drain Source On State Resistance0.017ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd5W
Gate Source Threshold Voltage Max4.5V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
The SI7852ADP-T1-GE3 is a 80VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.021ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.017ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5W
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate