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SI7818DN-T1-E3
Power MOSFET, N Channel, 150 V, 3.4 A, 0.135 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7818DN-T1-E3
Newark Part No.85W3225
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7818DN-T1-E3
Newark Part No.85W3225
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id3.4A
On Resistance Rds(on)0.112ohm
Drain Source On State Resistance0.135ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.5W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Transistor Case StylePowerPAK 1212
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Product Overview
The SI7818DN-T1-E3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switching circuit applications.
- 100% Rg tested
- 100% Avalanche tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.112ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
20V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
3.4A
Drain Source On State Resistance
0.135ohm
Power Dissipation Pd
1.5W
Gate Source Threshold Voltage Max
4V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate