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ManufacturerVISHAY
Manufacturer Part NoSI7454DP-T1-E3
Newark Part No.
Re-Reel06J8152
Cut Tape06J8152
Your Part Number
No Longer Available
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7454DP-T1-E3
Newark Part No.
Re-Reel06J8152
Cut Tape06J8152
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5A
Drain Source On State Resistance0.034ohm
On Resistance Rds(on)0.028ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.9W
Rds(on) Test Voltage10V
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max4V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Product Overview
The SI7454DP-T1-E3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- PWM optimized
- Fast switching
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Communications & Networking, Automotive
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.034ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
5A
On Resistance Rds(on)
0.028ohm
Power Dissipation Pd
1.9W
Transistor Case Style
PowerPAK SO
Power Dissipation
1.9W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
