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SI4900DY-T1-E3
Dual MOSFET, Dual N Channel, 60 V, 5.3 A, 0.058 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI4900DY-T1-E3
Newark Part No.
Re-Reel09X6438
Cut Tape09X6438
Your Part Number
Technical Datasheet
No Longer Available
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4900DY-T1-E3
Newark Part No.
Re-Reel09X6438
Cut Tape09X6438
Technical Datasheet
Channel TypeDual N Channel
Continuous Drain Current Id5.3A
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds60V
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.058ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
5.3A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.058ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate