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SI4866DY-T1-E3
Power MOSFET, N Channel, 12 V, 17 A, 0.0055 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4866DY-T1-E3
Newark Part No.
Re-Reel85W2150
Cut Tape85W2150
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 11 week(s)
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4866DY-T1-E3
Newark Part No.
Re-Reel85W2150
Cut Tape85W2150
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id17A
Drain Source On State Resistance0.0055ohm
On Resistance Rds(on)0.0045ohm
Transistor MountingSurface Mount
Power Dissipation Pd3W
Rds(on) Test Voltage4.5V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max600mV
Power Dissipation3W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.0055ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
600mV
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
On Resistance Rds(on)
0.0045ohm
Power Dissipation Pd
3W
Transistor Case Style
SOIC
Power Dissipation
3W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate