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SI4800BDY-T1-E3
Power MOSFET, N Channel, 30 V, 9 A, 0.0185 ohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI4800BDY-T1-E3
Newark Part No.06J7845
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4800BDY-T1-E3
Newark Part No.06J7845
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id9A
On Resistance Rds(on)0.0185ohm
Drain Source On State Resistance0.0185ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd800mW
Gate Source Threshold Voltage Max1.8V
Power Dissipation800mW
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4800BDY-T1-E3 is a TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- 100% UIS tested
- Fast switching
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0185ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source On State Resistance
0.0185ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
800mW
Power Dissipation
800mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability