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SI4425BDY-T1-E3
Power MOSFET, P Channel, 30 V, 11.4 A, 0.012 ohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI4425BDY-T1-E3
Newark Part No.06J7707
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4425BDY-T1-E3
Newark Part No.06J7707
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id11.4A
On Resistance Rds(on)0.01ohm
Drain Source On State Resistance0.012ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max400mV
Transistor Case StyleSOIC
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.01ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
11.4A
Drain Source On State Resistance
0.012ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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