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SI3900DV-T1-GE3
Dual MOSFET, Dual N Channel, 20 V, 2 A, 0.125 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI3900DV-T1-GE3
Newark Part No.35R6229
Your Part Number
Technical Datasheet
No Longer Available
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3900DV-T1-GE3
Newark Part No.35R6229
Technical Datasheet
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id2.4A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel2A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.125ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleTSOP
No. of Pins6Pins
Power Dissipation N Channel830mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
Dual N Channel
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
2A
Drain Source On State Resistance N Channel
0.125ohm
Transistor Case Style
TSOP
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate