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SI2343CDS-T1-GE3
Power MOSFET, P Channel, 30 V, 5.9 A, 0.045 ohm, SOT-23, Surface Mount
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| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $0.952 | $0.150 |
| 25+ | $0.622 | $0.150 |
| 50+ | $0.526 | $0.150 |
| 100+ | $0.429 | $0.150 |
| 250+ | $0.388 | $0.150 |
| 500+ | $0.346 | $0.150 |
| 1000+ | $0.319 | $0.150 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2343CDS-T1-GE3
Newark Part No.05W6936
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.9A
On Resistance Rds(on)0.037ohm
Drain Source On State Resistance0.045ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage10V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max1.2V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI2343CDS-T1-GE3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, notebook adaptor switch and DC-to-DC converter applications.
- 100% Rg tested
- -55 to 150°C Operating temperature range
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.037ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
5.9A
Drain Source On State Resistance
0.045ohm
Power Dissipation Pd
2.5W
Transistor Case Style
SOT-23
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability