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SI2316DS-T1-E3
Power MOSFET, N Channel, 30 V, 3.4 A, 0.05 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2316DS-T1-E3
Newark Part No.85W2139
Your Part Number
Technical Datasheet
Packaging Options
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2316DS-T1-E3
Newark Part No.85W2139
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.4A
Drain Source On State Resistance0.05ohm
On Resistance Rds(on)0.042ohm
Transistor MountingSurface Mount
Power Dissipation Pd960mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max800mV
Transistor Case StyleSOT-23
Power Dissipation960mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
3.4A
On Resistance Rds(on)
0.042ohm
Power Dissipation Pd
960mW
Gate Source Threshold Voltage Max
800mV
Power Dissipation
960mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate