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Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.300 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$900.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2307BDS-T1-E3
Newark Part No.64R4907
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2.5A
On Resistance Rds(on)0.063ohm
Drain Source On State Resistance0.078ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd750mW
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOT-23
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The SI2307BDS-T1-E3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.063ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
750mW
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2.5A
Drain Source On State Resistance
0.078ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
Power Dissipation
750mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
