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SI2306BDS-T1-E3
Power MOSFET, N Channel, 30 V, 3.16 A, 0.047 ohm, TO-236, Surface Mount
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| 1+ | $0.470 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2306BDS-T1-E3
Newark Part No.65K1920
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.16A
Drain Source On State Resistance0.047ohm
On Resistance Rds(on)0.038ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.25W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleTO-236
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Alternatives for SI2306BDS-T1-E3
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Product Overview
The SI2306BDS-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.047ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TO-236
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
3.16A
On Resistance Rds(on)
0.038ohm
Power Dissipation Pd
1.25W
Gate Source Threshold Voltage Max
3V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
WARNINGProposition 65