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SI2304BDS-T1-GE3
Power MOSFET, N Channel, 30 V, 3.2 A, 0.105 ohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2304BDS-T1-GE3
Newark Part No.16P3704
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2304BDS-T1-GE3
Newark Part No.16P3704
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.2A
Drain Source On State Resistance0.105ohm
On Resistance Rds(on)0.105ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Power Dissipation Pd750mW
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3V
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2304BDS-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- -55 to 150°C Operating temperature range
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.105ohm
Transistor Case Style
TO-236
Power Dissipation Pd
750mW
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
3.2A
On Resistance Rds(on)
0.105ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
20V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate