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SI1869DH-T1-E3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.2 A, 1.2 A, 0.132 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI1869DH-T1-E3
Newark Part No.29X0517
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1869DH-T1-E3
Newark Part No.29X0517
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id1.2A
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel1.2A
Continuous Drain Current Id P Channel1.2A
Drain Source On State Resistance N Channel0.132ohm
Drain Source On State Resistance P Channel0.132ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
1.2A
Drain Source On State Resistance P Channel
0.132ohm
No. of Pins
6Pins
Power Dissipation P Channel
1W
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
1.2A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
1.2A
Drain Source On State Resistance N Channel
0.132ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate