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SI1424EDH-T1-GE3
Power MOSFET, N Channel, 20 V, 4 A, 33 mohm, SOT-363, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI1424EDH-T1-GE3
Newark Part No.64T4052
Your Part Number
Technical Datasheet
385 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.556 |
| 10+ | $0.345 |
| 25+ | $0.304 |
| 50+ | $0.262 |
| 100+ | $0.220 |
| 250+ | $0.195 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$2.78
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1424EDH-T1-GE3
Newark Part No.64T4052
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
On Resistance Rds(on)0.027ohm
Drain Source On State Resistance33mohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2.8W
Gate Source Threshold Voltage Max400mV
Power Dissipation2.8W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI1424EDH-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switching and battery switch applications.
- 4000V ESD performance
- 100% Rg tested
- -55 to 150°C Operating temperature range
- Halogen-free
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
33mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.8W
Power Dissipation
2.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.027ohm
Transistor Case Style
SOT-363
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability