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SI1032X-T1-GE3
Power MOSFET, N Channel, 20 V, 200 mA, 5 ohm, SC-89, Surface Mount
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1032X-T1-GE3
Newark Part No.85W3201
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id200mA
Drain Source On State Resistance5ohm
On Resistance Rds(on)5ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage6V
Power Dissipation Pd300mW
Transistor Case StyleSC-89
Gate Source Threshold Voltage Max700mV
Power Dissipation300mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
300mW
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage
6V
Transistor Case Style
SC-89
Power Dissipation
300mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
