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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1029X-T1-GE3
Newark Part No.84W7285
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id305mA
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel305mA
Continuous Drain Current Id P Channel305mA
Drain Source On State Resistance N Channel1.4ohm
Drain Source On State Resistance P Channel1.4ohm
Transistor Case StyleSC-89
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI1029X-T1-GE3 is a N/P-channel complementary MOSFET designed for use with replace digital transistor, level-shifter, battery operated systems and power supply converter circuits applications. It offers ease in driving switches, low offset (error) voltage, low-voltage operation and high-speed circuits.
- Halogen-free
- TrenchFET® power MOSFET
- Very small footprint
- High-side switching
- Low ON-resistance
- ±2V Low threshold
- 15ns Fast switching speed
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
305mA
Drain Source On State Resistance P Channel
1.4ohm
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
305mA
Drain Source Voltage Vds
60V
Continuous Drain Current Id N Channel
305mA
Drain Source On State Resistance N Channel
1.4ohm
Transistor Case Style
SC-89
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
