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IRLZ34PBF
Power MOSFET, N Channel, 60 V, 30 A, 0.05 ohm, TO-220, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoIRLZ34PBF
Newark Part No.63J7707
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.328 |
| 10+ | $0.328 |
| 25+ | $0.328 |
| 50+ | $0.328 |
| 100+ | $0.328 |
| 500+ | $0.328 |
| 1000+ | $0.328 |
| 2500+ | $0.328 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLZ34PBF
Newark Part No.63J7707
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id30A
Drain Source On State Resistance0.05ohm
On Resistance Rds(on)0.05ohm
Transistor MountingThrough Hole
Power Dissipation Pd88W
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Transistor Case StyleTO-220
Power Dissipation88W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
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Product Overview
The IRLZ34PBF is a 60V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175°C Operating temperature
- Easy to parallel
- Simple drive requirement
- Logic level gate drive
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
5V
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.05ohm
Power Dissipation Pd
88W
Gate Source Threshold Voltage Max
2V
Power Dissipation
88W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability