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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLD120PBF
Newark Part No.19K8369
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.3A
On Resistance Rds(on)0.27ohm
Drain Source On State Resistance0.27ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Power Dissipation Pd1.3W
Gate Source Threshold Voltage Max2V
Transistor Case StyleHVMDIP
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCNo SVHC (07-Nov-2024)
Product Overview
The IRLD120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
- Dynamic dV/dt rating
- For automatic insertion
- Repetitive avalanche rated
- End stackable
- Logic-level gate drive
- RDS (ON) Specified at VGS = 4 and 5V
- -55 to 175°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.27ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
1.3W
Transistor Case Style
HVMDIP
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
1.3A
Drain Source On State Resistance
0.27ohm
Rds(on) Test Voltage
5V
Gate Source Threshold Voltage Max
2V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
