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| Quantity | Price |
|---|---|
| 1+ | $3.500 |
| 10+ | $3.370 |
| 25+ | $2.170 |
| 50+ | $2.120 |
| 100+ | $2.070 |
| 500+ | $1.900 |
| 1000+ | $1.670 |
| 2500+ | $1.600 |
Product Information
Product Overview
The IRFZ44RPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. This Power device utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with the ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- -55 to 175°C Operating temperature range
- Fully avalanche rated
Applications
Industrial, Power Management, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
60V
0.028ohm
Through Hole
10V
4V
3Pins
-
-
N Channel
50A
0.028ohm
150W
TO-220
150W
175°C
-
Lead
Technical Docs (2)
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Associated Products
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Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate
